View A2T23H300-24S_9063889.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

a2t23h300--24sr6 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 66 w asymmetrical doherty rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 2300 to 2400 mhz. 2300 mhz ? typical doherty single--carrier w--cdma performance: v dd =28vdc, i dqa = 750 ma, v gsb =0.7vdc,p out = 66 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) 2300 mhz 14.9 46.7 7.8 ?34.0 2350 mhz 15.1 46.5 7.8 ?35.6 2400 mhz 15.1 46.4 7.5 ?34.6 features ? advanced high performance in--package doherty ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems document number: a2t23h300--24s rev. 0, 6/2015 freescale semiconductor technical data 2300?2400 mhz, 66 w avg., 28 v airfast rf power ldmos transistor a2t23h300--24sr6 figure 1. pin connections (top view) rf outa /v dsa rf outb /v dsb rf ina /v gsa rf inb /v gsb vbw a (1) vbw b (1) 6 3 15 24 carrier peaking ni--1230s--4l2l 1. device cannot operate with the v dd current supplied through pin 3 and pin 6. ? freescale semiconductor, inc., 2015. all rights reserved.
2 rf device data freescale semiconductor, inc. a2t23h300--24sr6 table 1. maximum ratings rating symbol value unit drain--source voltage v dss --0.5, +65 vdc gate--source voltage v gs --6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg --65 to +150 ? c case operating temperature range t c --40 to +150 ? c operating junction temperature range (1,2) t j --40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 248 1.2 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 72 ? c, 66 w avg., w--cdma, 28 vdc, i dqa = 750 ma, v gsb = 0.7 vdc, 2350 mhz r ? jc 0.25 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics (4) zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics -- side a (carrier) gate threshold voltage (v ds =10vdc,i d = 160 ? adc) v gs(th) 0.8 1.2 1.6 vdc gate quiescent voltage (v dd =28vdc,i da = 750 madc, measured in functional test) v gs(q) 1.4 1.8 2.2 vdc drain--source on--voltage (v gs =10vdc,i d =1.6adc) v ds(on) 0.1 0.2 0.3 vdc on characteristics -- side b (peaking) gate threshold voltage (v ds =10vdc,i d = 240 ? adc) v gs(th) 0.8 1.2 1.6 vdc drain--source on--voltage (v gs =10vdc,i d =2.4adc) v ds(on) 0.1 0.2 0.3 vdc 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http:// www.freescale.com/rf/calculators. 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf and search for an1955. 4. each side of device measured separately. (continued)
a2t23h300--24sr6 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (1,2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 750 ma, v gsb =0.7vdc,p out =66wavg., f = 2300 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 14.0 14.9 17.0 db drain efficiency ? d 43.0 46.7 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 7.2 7.8 ? db adjacent channel power ratio acpr ? --34.0 --31.0 dbc load mismatch (2) (in freescale doherty test fixture, 50 ohm system) i dqa = 750 ma, v gsb = 0.7 vdc, f = 2350 mhz, 100 ? sec(on), 10% duty cycle vswr 5:1 at 32 vdc, 417 w pulsed cw output power (3 db input overdrive from 324 w pulsed cw rated power) no device degradation typical performance (2) (in freescale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 750 ma, v gsb =0.7vdc, 2300?2400 mhz bandwidth p out @ 1 db compression point, cw p1db ? 275 ? w p out @ 3 db compression point (3) p3db ? 410 ? w am/pm (maximum value measured at the p3db compression point across the 2300?2400 mhz frequency range) ? ? ?12.3 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 90 ? mhz gain flatness in 100 mhz bandwidth @ p out =66wavg. g f ? 0.3 ? db gain variation over temperature (--30 ? cto+85 ? c) ? g ? 0.0075 ? db/ ? c output power variation over temperature (--30 ? cto+85 ? c) ? p1db ? 0.0075 ? db/ ? c table 5. ordering information device tape and reel information package a2t23h300--24sr6 r6 suffix = 150 units, 56 mm tape width, 13--inch reel ni--1230s--4l2l 1. part internally matched both on input and output. 2. measurements made with device in an a symmetrical doherty configuration. 3. p3db = p avg + 7.0 db where p avg is the average output power measured using an uncli pped w--cdma single--carrier input signal where output par is compressed to 7.0 db @ 0.01% probability on ccdf.
4 rf device data freescale semiconductor, inc. a2t23h300--24sr6 figure 2. a2t23h300--24sr6 test circuit component layout *c3, c4, c5, c6, c14 and c15 are mounted vertically. cut out area a2t23h300 rev. 1 d66099 v dda v gga v ddb v ggb c1 c2 r2 c3* c4* c5* c6* r1 z1 c7 c8 r3 c10 c12 c11 c9 c14* c15* c13 c16 c17 c18 c19 c p table 6. a2t23h300--24sr6 test circuit component designations and values part description part number manufacturer c1, c8, c10, c12, c16, c18 10 ? f chip capacitors c5750x7s2a106m230kb tdk c2, c4, c5, c7, c11, c17 8.2 pf chip capacitors atc100b8r2ct500xt atc c3 0.7 pf chip capacitor atc100b0r7ct500xt atc c6 0.8 pf chip capacitor atc100b0r8ct500xt atc c9, c19 470 ? f, 63 v electrolytic capacitors mcgpr63v477m13x26 multicomp c13 0.6 pf chip capacitor atc00f0r6bt250xt atc c14 5.6 pf chip capacitor atc100b5r6ct500xt atc c15 6.8 pf chip capacitor atc100b6r8ct500xt atc r1 50 ? , 10 w termination cw12010t0050gbk atc r2, r3 3.0 ? , 1/4 w chip resistors crcw12063r0fkea vishay z1 2300?2700 mhz band, 90 ? , 2 db hybrid coupler x3c25p1-02s anaren pcb rogers ro4350b, 0.020 ? , ? r =3.66 d66099 mtl
a2t23h300--24sr6 5 rf device data freescale semiconductor, inc. typical characteris tics ? 2300?2400 mhz parc (db) ?2.4 ?1.6 ?1.8 ?2 ?2.2 ?2.6 2290 f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 66 watts avg. 14.6 15.6 15.5 15.4 ?37 48.5 48 47.5 47 ?32 ?33 ?34 ?35 ? d , drain efficiency (%) g ps , power gain (db) 15.3 15.2 15.1 15 14.9 14.8 14.7 2305 2320 2335 2350 2365 2380 2395 2410 46.5 ?36 acpr (dbc) figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ? 90 0 ? 15 ? 30 ? 60 1 300 imd, intermodulatio n distortion (dbc) ? 45 figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) ?1 ?3 35 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 15 55 75 115 25 55 50 45 40 35 30 ? d ? drain efficiency (%) 95 ? d acpr parc acpr (dbc) ?42 ?30 ?32 ?34 ?38 ?36 ?40 15.6 g ps , power gain (db) 15.4 15.2 15 14.8 14.6 14.4 g ps ?5 1 acpr ? d parc g ps v dd =28vdc,p out =66w(avg.),i dqa = 750 ma, v gsb =0.7vdc single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf v dd =28vdc,p out = 24 w (pep), i dqa = 750 ma v gsb = 0.7 vdc, two--tone measurements (f1 + f2)/2 = center frequency of 2350 mhz im3--l im5--u im7--l im7--u 100 ?1 db = 48.25 w 3.84 mhz channel bandwidth input signal par = 9.9 db @ 0.01% pr obabilit y on ccdf ?2 db = 65.3 w ?3 db = 84.8 w im5--l im3--u ? 75 v dd =28vdc,i dqa = 750 ma, v gsb =0.7vdc f = 2350 mhz, single--carrier w--cdma
6 rf device data freescale semiconductor, inc. a2t23h300--24sr6 typical characteris tics ? 2300?2400 mhz 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?10 ?20 11 17 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 16 15 10 400 10 ?60 acpr (dbc) 14 13 12 0 ?30 ?40 ?50 figure 7. broadband frequency response 3 21 f, frequency (mhz) v dd =28vdc p in =0dbm i dqa = 750 ma v gsb =0.7vdc 15 12 9 gain (db) 18 6 2000 2100 2200 2300 2400 2500 2600 2700 2800 gain acpr ? d 2300 mhz g ps 2400 mhz 2350 mhz 2300 mhz 2350 mhz 2400 mhz 2300 mhz 2350 mhz 2400 mhz v dd =28vdc,i dqa = 750 ma, v gsb =0.7vdc single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probab ility on ccdf 100
a2t23h300--24sr6 7 rf device data freescale semiconductor, inc. table 7. carrier side load pull performance ? maximum power tuning v dd =28vdc,i dqa = 792 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2300 4.89 ? j11.2 5.24 + j10.5 1.78 ? j4.54 17.8 52.5 179 56.8 ?14 2350 8.32 ? j12.4 7.67 + j11.4 1.75 ? j4.50 17.9 52.5 179 56.8 ?14 2400 12.6 ? j12.7 11.7 + j11.9 1.68 ? j4.54 18.0 52.4 175 55.9 ?14 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2300 4.89 ? j11.2 5.24 + j11.4 1.72 ? j4.83 15.6 53.3 213 57.0 ?19 2350 8.32 ? j12.4 8.12 + j12.7 1.68 ? j4.82 15.6 53.2 211 56.3 ?19 2400 12.6 ? j12.7 13.2 + j13.5 1.65 ? j4.81 15.8 53.2 208 55.8 ?20 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 8. carrier side load pull performance ? maximum drain efficiency tuning v dd =28vdc,i dqa = 792 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2300 4.89 ? j11.2 4.97 + j11.1 4.10 ? j2.52 20.6 50.1 103 67.1 ?22 2350 8.32 ? j12.4 7.36 + j12.4 3.57 ? j2.19 20.7 50.0 99 66.9 ?24 2400 12.6 ? j12.7 11.6 + j13.0 3.31 ? j2.28 20.9 49.9 97 66.2 ?22 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2300 4.89 ? j11.2 4.88 + j11.6 3.40 ? j3.40 17.9 51.7 149 66.7 ?28 2350 8.32 ? j12.4 7.51 + j13.2 3.07 ? j3.11 18.1 51.6 145 66.3 ?29 2400 12.6 ? j12.7 12.6 + j14.5 2.64 ? j3.24 18.1 51.8 152 65.7 ?28 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. a2t23h300--24sr6 table 9. peaking side load pull performance ? maximum power tuning v dd =28vdc,v gsb =1.7vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2300 5.90 ? j10.4 5.66 + j9.30 1.81 ? j5.44 17.1 54.7 293 53.9 ?19 2350 10.2 ? j11.1 8.59 + j9.73 1.90 ? j5.61 17.3 54.6 287 53.0 ?20 2400 14.7 ? j8.30 12.6 + j7.98 1.98 ? j5.78 17.4 54.4 277 51.8 ?20 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2300 5.90 ? j10.4 5.71 + j9.97 1.70 ? j5.69 14.8 55.3 342 54.6 ?24 2350 10.2 ? j11.1 9.18 + j10.6 1.84 ? j5.84 15.0 55.3 335 53.7 ?25 2400 14.7 ? j8.30 14.2 + j8.34 1.98 ? j6.02 15.3 55.1 326 52.8 ?25 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 10. peaking side load pull performance ? maximum drain efficiency tuning v dd =28vdc,v gsb =1.7vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2300 5.90 ? j10.4 5.97 + j9.73 4.06 ? j5.24 19.2 53.2 209 63.8 ?25 2350 10.2 ? j11.1 9.06 + j10.3 4.47 ? j4.20 19.7 52.6 181 62.8 ?27 2400 14.7 ? j8.30 13.0 + j8.08 3.78 ? j4.57 19.4 53.1 202 61.4 ?24 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2300 5.90 ? j10.4 5.91 + j10.3 3.98 ? j5.24 17.1 53.9 246 64.5 ?32 2350 10.2 ? j11.1 9.64 + j10.8 4.23 ? j4.68 17.4 53.7 233 64.0 ?34 2400 14.7 ? j8.30 14.7 + j8.19 3.93 ? j4.31 17.6 53.7 233 63.4 ?34 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
a2t23h300--24sr6 9 rf device data freescale semiconductor, inc. p1db ? typical carrier load pull contours ? 2350 mhz ?1 ?3 imaginary ( ? ) 22.5 16 ?2 ?5 ?6 1.5 3 ?4 3.5 4 4.5 5 5.5 ?1 ?3 imaginary ( ? ) 22.5 16 ?2 ?5 ?6 1.5 3 ?4 3.5 4 4.5 5 5.5 ? 1 ?3 imaginary ( ? ) 22.5 16 ?2 ?5 ?6 1.5 3 ?4 3.5 4 4.5 5 5.5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 8. p1db load pull output power contours (dbm) real ( ? ) ? 1 ?3 imaginary ( ? ) 22.5 16 ?2 ?5 ?6 1.5 figure 9. p1db load pull efficiency contours (%) real ( ? ) figure 10. p1db load pull gain contours (db) real ( ? ) figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) 3 e ?4 3.5 4 4.5 5 5.5 e p 50.5 48.5 51.5 51 52 49.5 50 48.5 49 e 56 50 58 52 62 64 66 54 60 p 19.5 17.5 19 20 18 18.5 20.5 21 p e e p 52.5 54 p ?14 ?16 ?18 ?20 ?22 ?24 ?26 ?28
10 rf device data freescale semiconductor, inc. a2t23h300--24sr6 p3db ? typical carrier load pull contours ? 2350 mhz p e 0 ?2 imaginary ( ? ) 1.5 2 2.5 5 ?1 ?4 ?6 13 ?3 3.5 4 4.5 ?5 0 ?2 imaginary ( ? ) 1.5 2 2.5 5 ?1 ?4 ?6 13 ?3 3.5 4 4.5 ?5 0 ?2 imaginary ( ? ) 1.5 2 2.5 5 ?1 ?4 ?6 13 ?3 3.5 4 4.5 ?5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p3db load pull output power contours (dbm) real ( ? ) 0 ?2 imaginary ( ? ) 1.5 2 2.5 5 ?1 ?4 ?6 1 figure 13. p3db load pull efficiency contours (%) real ( ? ) figure 14. p3db load pull gain contours (db) real ( ? ) figure 15. p3db load pull am/pm contours ( ? ) real ( ? ) 3 p e ?3 3.5 4 4.5 ?5 p e p e 52.5 50.5 51 49 49.5 50 53 p e e p p e e p 51.5 52 50 52 54 56 58 60 62 64 66 15.5 16 16.5 17 17.5 18 18.5 19 15 ?18 ?20 ?22 ?24 ?26 ?28 ?30 ?32
a2t23h300--24sr6 11 rf device data freescale semiconductor, inc. p1db ? typical peaking load pull contours ? 2350 mhz p e p e p e p e imaginary ( ? ) 23 4 1 8 ?4 ?7 5 ?3 ?2 ?5 ?6 67 imaginary ( ? ) 23 4 1 8 ?4 ?7 5 ?3 ? 2 ?5 ?6 67 imaginary ( ? ) 23 4 1 8 ?4 ?7 5 ?3 ?2 ?5 ?6 67 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 16. p1db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) 23 4 1 8 ?4 ?7 figure 17. p1db load pull efficiency contours (%) real ( ? ) figure 18. p1db load pull gain contours (db) real ( ? ) figure 19. p1db load pull am/pm contours ( ? ) real ( ? ) 5 p e p e p e ?3 ? 2 ?5 ?6 67 p e 50.5 51 51.5 52.5 53.5 54.5 52 53 54 46 48 50 52 54 56 58 60 62 56 20 19.5 ?18 19 18.5 18 17.5 17 16.5 ?20 ?22 ?24 ?26 ?28 ?30 ?32 ?34
12 rf device data freescale semiconductor, inc. a2t23h300--24sr6 p3db ? typical peaking load pull contours ? 2350 mhz imaginary ( ? ) 23 4 1 8 ?4 ?7 5 ?3 ?2 ?5 ?6 67 imaginary ( ? ) 23 4 1 8 ?4 ?7 5 ?3 ? 2 ?5 ?6 67 imaginary ( ? ) 23 4 1 8 ?4 ?7 5 ?3 ?2 ?5 ?6 67 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 20. p3db load pull output power contours (dbm) real ( ? ) imaginary ( ? ) 23 4 1 8 ?4 ?7 figure 21. p3db load pull efficiency contours (%) real ( ? ) figure 22. p3db load pull gain contours (db) real ( ? ) figure 23. p3db load pull am/pm contours ( ? ) real ( ? ) 5 ?3 ? 2 ?5 ?6 67 p e p e p e p e p e p e p e p e 51.5 52 52.5 53 53.5 54 54.5 55 58 60 56 58 48 50 52 54 56 58 62 18 17.5 17 16.5 16 15.5 15 14.5 ?38 ?36 ?34 ?32 ?30 ?28 ?26 ?24 ?22
a2t23h300--24sr6 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. a2t23h300--24sr6
a2t23h300--24sr6 15 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? .s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .freescale.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 june 2015 ? initial release of data sheet
16 rf device data freescale semiconductor, inc. a2t23h300--24sr6 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all li ability, including without limit ation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2015 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: a2t23h300--24s rev. 0, 6/2015

▲Up To Search▲

Price & Availability of A2T23H300-24S

	To Download A2T23H300-24S Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .